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IXFH94N30T - Power MOSFET

Download the IXFH94N30T datasheet PDF. This datasheet also covers the IXFT94N30T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z International Standard Packages z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Rectifier z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density.

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Note: The manufacturer provides a single datasheet file (IXFT94N30T-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXFH94N30T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFH94N30T. For precise diagrams, and layout, please refer to the original PDF.

Preliminary Technical Information TrenchTM HiperFETTM Power MOSFETs IXFT94N30T IXFH94N30T VDSS = 300V ID25 = 94A ≤ RDS(on) 36mΩ N-Channel Enhancement Mode Avalanche Rated...

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V ID25 = 94A ≤ RDS(on) 36mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 300 V 300 V ±20 V ±30 V 94 A 235 A 47 A 500 mJ 890 W 20 V/ns -55 to +150 °C +150 °C -55 to +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IXFH94N30T N-Channel MOSFET INCHANGE

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