IXFK140N30P Description
300 V 3.0 5.0 V ±200 nA 25 μA 1 mA 20 24 mΩ G D S PLUS247 (IXFX) (TAB) G = Gate S = Source (TAB) D = Drain TAB = Drain.
IXFK140N30P Key Features
- Fast intrinsic diode
- Avalanche Rated
- Low RDS(ON) and QG
- Low package inductance
IXFK140N30P is Power MOSFET manufactured by IXYS.
| Part Number | Description |
|---|---|
| IXFK140N20P | PolarHT HiPerFET Power MOSFET |
| IXFK140N25T | GigaMOS Power MOSFET |
| IXFK140N25T | GigaMOS Power MOSFET |
| IXFK100N65X2 | Power MOSFET |
| IXFK120N20 | Power MOSFET |
300 V 3.0 5.0 V ±200 nA 25 μA 1 mA 20 24 mΩ G D S PLUS247 (IXFX) (TAB) G = Gate S = Source (TAB) D = Drain TAB = Drain.