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IXFK140N30P - Power MOSFET

Key Features

  • Fast intrinsic diode.
  • Avalanche Rated.
  • Low RDS(ON) and QG.
  • Low package inductance Advantages z Easy to mount z Space savings z High power density.

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Full PDF Text Transcription for IXFK140N30P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFK140N30P. For precise diagrams, and layout, please refer to the original PDF.

PolarTM Power MOSFET HiPerFETTM IXFK140N30P IXFX140N30P N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode VDSS = ID25 = ≤ RDS(on) t rr ≤ 300V 140A 24mΩ 200ns...

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ast Intrisic Diode VDSS = ID25 = ≤ RDS(on) t rr ≤ 300V 140A 24mΩ 200ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting force (PLUS247) Mounting torque (TO-264) PLUS247 TO-264 Maximum Ratings 300 V 300 V ±20 V ±30 V 140 A 75 A 300 A 70 A 5 J 20 1040 -55 ... +150 150 -55 ... +150 300 260 2

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