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PolarTM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFH170N10P IXFK170N10P
VDSS =
ID25 =
RDS(on) ≤
trr
≤
100V 170A 9mΩ 150ns
TO-247 (IXFH)
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque TO-247 TO-264
Maximum Ratings
100
V
100
V
± 20
V
± 30
V
170
A
160
A
350
A
60
A
2
J
10
V/ns
715
W
-55 to +175
°C
+175
°C
-55 to +175
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
IXFK170N10P Datasheet
