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IXFK180N07 - Power MOSFET

Key Features

  • z International Standard Packages z Avalanche Rated z Low Intrinsic Gate Resistance z Low Package Inductance z Fast Intrinsic Rectifier z Low RDS(on) and QG Advantages z High Power Density z Easy to Mount z Space Savings.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HiperFETTM Power MOSFETs IXFK180N07 IXFX180N07 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier D G S Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247 Maximum Ratings 70 V 70 V ±20 V ±30 V 180 A 160 A 720 A 180 A 3 J 5 V/ns 568 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 260 1.13/10 20..120 /4.5..27 10 6 °C °C Nm/lb.in. N/lb.