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HiperFETTM Power MOSFETs
IXFK180N07 IXFX180N07
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
D G
S
Symbol
VDSS VDGR
VGSS VGSM
ID25 IL(RMS) IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
Md FC
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247
Maximum Ratings
70
V
70
V
±20
V
±30
V
180
A
160
A
720
A
180
A
3
J
5
V/ns
568
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300 260
1.13/10 20..120 /4.5..27
10 6
°C °C
Nm/lb.in. N/lb.
IXFK180N07 Datasheet
