IXYS IXFK26N90
Power MOSFET
MAXIMUM RATINGS
900 V 900 V ± 20 V ± 30 V 25N90 25 A 25N90 100 A 26N90 26 A 26N90 104 A 25N90 25 A 26N90 26 A 3 J 5 V/ns 560 -55 ... +150 150 -55 ... +150 300 260 1.13/10 20..120 /4.5..27 10 6 W °C °C °C °C °C Nm/lb.in. N/lb. g g Symbol BVDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. VGS = 0V, ID = 3mA 900 V VDS = VGS, ID = 8mA VGS = ± 20V, VDS = 0V VDS = 0.8● VDSS VGS = 0V TJ = 125°C VGS = 10V, ID = 0.5
● ID25, Note 1 3.0 25N90 26N90 5.0 V ± 200 nA 100 μA 2 mA 330 mΩ 300 mΩ VDSS 900V 900V ID25 25A 26A RDS(on) 330mΩ 300mΩ TO-264 G D S PLUS247 (TAB) G = Gate S = Source (TAB) D = Drain TAB = Drain
FEATURES
z International standard packages z Avalanche Rated z Low package inductance z Low RDS(ON) HDMOS Process z Fast intrinsic diode Advantages z Easy to mount z Space savings z High power densityAPPLICATIONS
: z Switched-mode and resonant-mode power supplies z DC-DC Converters z Battery chargers z DC choppers z AC...