z RF capable Mosfets z Rugged polysilicon gate cell structure z Double metal process for low gate resistance z Unclamped Inductive Switching (UIS)
rated z Low package inductance
- easy to drive and to protect z Fast intrinsic rectifier.
Full PDF Text Transcription for IXFK55N50F (Reference)
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Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Low Qg, Low Intrinsic Rg High dV/dt, Low trr...
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ment Mode Avalanche Rated Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFK55N50F IXFX55N50F VDSS = ID25 = RDS(on) ≤ trr ≤ 500V 55A 85mΩ 250ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247 Maximum Ratings 500 V 500 V ± 20 V ± 30
IXFK55N50F Datasheet
