IXYS IXFK88N30P
PolarHT HiPerFET Power MOSFET
MAXIMUM RATINGS
300 300 ± 20 ± 30 88 75 220 60 60 2.0 10 600 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C TO-247 (IXFH) D (TAB) TO-264 (IXFK) G D S (TAB) D = Drain TAB = Drain G = Gate S = SourceFEATURES
z z 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-264 300 z 1.13/10 Nm/lb.in. 6 10 g g International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 ±100 25 250 40 V V nA µA µA mΩ Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved DS99216(12/04) IXFH 88N30P IXFK 88N30P TO-247 AD Outline Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min.