IXYS IXFM13N50
Power MOSFET
| Part No. | IXFM13N50 |
|---|---|
| Datasheet | IXFM13N50 Download |
| Manufacturer |  IXYS |
| Description | Power MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Mounting torque 500 V 500 V ±20 V ±30 V 13 A 52 A 13 A 18 mJ 5 V/ns 180 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V GS = 0 V, I D = 250 mA 500 VDS = VGS, ID = 2.5 mA 2 V GS = ±20 V, DC V DS = 0 VDS = 0.8● VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5
● ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % V 4V ±100 nA 200 mA 1 mA 0.4 W TO-247 AD (IXFH) TO-204 AA (IXFM) (TAB) G = Gate, S = Source, G D D = Drain, TAB = Drain
FEATURES
q International standard packages q Low R HDMOSTM process DS (on) q Rugged polysilicon gate cell structure q Unclamped Inductive Switching (UIS) r...
