IXFN61N50
Features
- International standard package
- Isolation voltage 3000V (RMS)
- Low R DS (on) HDMOSTM processl
- Rugged polysilicon gate cell structure
- Low drain-to-case capacitance (<60 p F)
- reduced RFI
- Low package inductance (< 10 n H)
- easy to drive and to protect
- Aluminium Nitride Isolation
- increased current ratings Applications
- DC choppers
- AC motor speed controls
- DC servo and robot drives
- Uninterruptible power supplies (UPS)
- Switched mode and resonant mode power supplies Advantages
- Easy to mount
- Space savings
- High power density 1 = Source 3 = Drain
2 mini BLOC, SOT-227 B
4 3
2 = Gate 4 = Source
50/60 Hz, RMS t = 1 minute t = 1s
2500 3000
Md
Mounting torque Terminal connection torque (M4)
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 75 g m J
Weight EAR
Symbol
Test Conditions
Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 500 1.7 4.0 ±200 500 2 V V n A µA m A
V DSS V GS(th) I GSS I DSS R DS(on)
VGS = 0 V, I D = 5 m A VDS = V GS,...
