IXFN61N50 - High Current Power MOSFET

Features

International standard package.
Isolation voltage 3000V (RMS).
Low R DS (on).

IXYS

Datasheet Details

Part number	IXFN61N50
Manufacturer	IXYS
File Size	54.17 KB
Description	High Current Power MOSFET
Datasheet	IXFN61N50 Datasheet
Additional preview pages of the IXFN61N50 datasheet.

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Full PDF Text Transcription

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IXFN 58N50 IXFN 61N50 Preliminary Data Sheet www.DataSheet4U.com VDSS ID25 58A 61A RDS(on) 85 mΩ 75 mΩ High Current Power MOSFET N-Channel Enhancement Mode IXFN 58N50 500V IXFN 61N50 500V Symbol VDSS VDGR V GS V GSM I D25 I DM PD TJ TJM Tstg VISOL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C TC = 25°C (1) TC = 25°C IXFN IXFN IXFN IXFN Maximum Ratings 500 500 ±20 ±30 58N50 61N50 58N50 61N50 58 61 232 244 625 -40 ... +150 150 -40 ...

Published: Apr 27, 2010 |