Datasheet4U Logo Datasheet4U.com

IXFN61N50 - High Current Power MOSFET

Key Features

  • International standard package.
  • Isolation voltage 3000V (RMS).
  • Low R DS (on).

📥 Download Datasheet

Full PDF Text Transcription for IXFN61N50 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFN61N50. For precise diagrams, and layout, please refer to the original PDF.

IXFN 58N50 IXFN 61N50 Preliminary Data Sheet www.DataSheet4U.com VDSS ID25 58A 61A RDS(on) 85 mΩ 75 mΩ High Current Power MOSFET N-Channel Enhancement Mode IXFN 58N50 500...

View more extracted text
mΩ High Current Power MOSFET N-Channel Enhancement Mode IXFN 58N50 500V IXFN 61N50 500V Symbol VDSS VDGR V GS V GSM I D25 I DM PD TJ TJM Tstg VISOL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C TC = 25°C (1) TC = 25°C IXFN IXFN IXFN IXFN Maximum Ratings 500 500 ±20 ±30 58N50 61N50 58N50 61N50 58 61 232 244 625 -40 ... +150 150 -40 ...