• Part: IXFN66N50Q2
  • Description: HiPerFET Power MOSFET
  • Category: MOSFET
  • Manufacturer: IXYS
  • Size: 169.76 KB
Download IXFN66N50Q2 Datasheet PDF
IXYS
IXFN66N50Q2
Features z l Double metal process for low gate resistance z mini BLOC, with Aluminium nitride isolation z Unclamped Inductive Switching (UIS) rated z Low package inductance z Fast intrinsic Rectifier Applications z DC-DC converters z Switched-mode and resonant-mode power supplies z DC choppers z Pulse generators Advantages z Easy to mount z Space savings z High power density G = Gate S = Source D = Drain Either Source terminal at mini BLOC can be used as Main or Kelvin Source 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.0 TJ = 25°C TJ = 125°C 4.5 V V VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3m A VDS = VGS, ID = 8m A VGS = ±30 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ï ID25 ±200 n A 50 µA 3 m A 80 mΩ DS99077A(08/05) © 2003 IXYS All rights reserved Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max....