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HiPerFET Power MOSFET
TM
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IXFN66N50Q2
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
VDSS = 500 V ID25 = 66 A RDS(on)= 80 mΩ ≤ 250 ns trr
miniBLOC, SOT-227 B (IXFN) E153432 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS, t = 1 minute Mounting torque Terminal connection torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings
G S
500 500 ±30 ±40 66 264 66 75 4.0 20 735 -55 ... +150 150 -55 ...
IXFN66N50Q2 Datasheet
