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IXFN70N120SK - SiC Power MOSFET

Key Features

  • / Advantages:.
  • High speed switching with low capacitances.
  • High blocking voltage with low RDS(on).
  • Easy to parallel and simple to drive.
  • Resistant to latch-up.
  • Real Kelvin source connection.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SiC Power MOSFET Kelvin Source gate connection Part number IXFN70N120SK IXFN70N120SK ID25 = 68 A VDSS = 1200 V R = DS(on) max 34 mΩ D (3) KS G S D Backside: isolated E72873 G (2) KS (1) S (4) Features / Advantages: • High speed switching with low capacitances • High blocking voltage with low RDS(on) • Easy to parallel and simple to drive • Resistant to latch-up • Real Kelvin source connection Applications: • Solar inverters • High voltage DC/DC converters • Motor drives • Switch mode power supplies • UPS • Battery chargers • Induction heating Package: SOT-227B (minibloc) • Isolation Voltage: 2500 V~ • Industry standard outline • RoHS compliant • Epoxy meets UL 94V-0 • Base plate with Aluminium nitride isolation • Advanced power cycling Disclaimer Notice Information furnished