IXYS IXFP05N100M
High Voltage HiperFET
| Part No. | IXFP05N100M |
|---|---|
| Datasheet | IXFP05N100M Download |
| Manufacturer |  IXYS |
| Description | High Voltage HiperFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
1000 1000 ± 30 ± 40 700 3 1 100 5 25 - 55 ... +150 150 - 55 ... +150 V V V V mA A A mJ V/ns W °C °C °C °C °C Nm/lb.in. gFEATURES
Plastic overmolded tab for electrical isolation International standard package Avalanche rated Low package inductance Advantages Easy to mount Space savings High power density V 4.5 V G Isolated Tab D S D = Drain G = Gate S = Source 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque 300 260 1.13/10 2.5 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ±30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 1000 2.5 ±100 nA 25 μA 500 μA 15 17 Ω VGS = 10V, ID = 375mA, Note 1 © 2008 IXYS CORPORATION, All rights reserved DS100069(11/08) IXFP05N100M Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 0.55 0.93 260 VGS = 0V, VDS = 25V, f = 1MHz Resistive Swi...
