Overview: Preliminary Technical Information X-Class HiPERFET Power MOSFET
(Electrically Isolated Tab) IXFP4N85XM VDSS =
ID25 = RDS(on) 850V 3.5A 2.5 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD VISOL
Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C, Limited by TJM TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 50/60 Hz, 1 Minute Mounting Torque Maximum Ratings 850 V 850 V 30 V 40 V 3.5 A 10.0 A 2 A 125 mJ 50 V/ns 35 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 2500 V~ 1.13 / 10 2.5 Nm/lb.in g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 2A, Note 1 Characteristic Values Min. Typ. Max. 850 V 3.0 5.5 V 100 nA 5 A 500 A 2.
