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IXFQ24N60X - Power MOSFET

This page provides the datasheet information for the IXFQ24N60X, a member of the IXFA24N60X Power MOSFET family.

Datasheet Summary

Features

  • International Standard Packages.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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Datasheet preview – IXFQ24N60X

Datasheet Details

Part number IXFQ24N60X
Manufacturer IXYS
File Size 156.06 KB
Description Power MOSFET
Datasheet download datasheet IXFQ24N60X Datasheet
Additional preview pages of the IXFQ24N60X datasheet.

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Full PDF Text Transcription

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Preliminary Technical Information X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA24N60X IXFP24N60X IXFQ24N60X IXFH24N60X TO-263 AA (IXFA) VDSS = ID25 = RDS(on) 600V 24A 175m TO-220AB (IXFP) G S D (Tab) GD S TO-3P (IXFQ) D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions Maximum Ratings TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient 600 V 600 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 24 48 8 500 50 400 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.
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