IXFR32N100Q3
Features
- Silicon Chip on Direct-Copper Bond (DCB) Substrate
- Isolated Mounting Surface
- Low Intrinsic Gate Resistance
- 2500V~ Electrical Isolation
- Fast Intrinsic Rectifier
- Avalanche Rated
- Low Package Inductance
Advantages
- High Power Density
- Easy to Mount
- Space Savings
Applications
- DC-DC Converters
- Battery Chargers
- Switch-Mode and Resonant-Mode
Power Supplies
- DC Choppers
- Temperature and Lighting Controls
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DS100366B(1/20)
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified) gfs
VDS = 20V, ID = 16A, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
RGi
Gate Input Resistance td(on) tr td(off) tf
Resistive Switching Times VGS = 10V, VDS = 0.5
- VDSS, ID = 16A RG = 1 (External)
Qg(on) Qgs Qgd
VGS = 10V, VDS = 0.5
- VDSS, ID = 16A
Rth JC Rth CS
Characteristic Values Min. Typ. Max.
10.9 n F
745 p F
67 p...
