IXFR70N15
Key Features
- Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
- Low drain to tab capacitance(<30pF)
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Rated for Unclamped Inductive Load Switching (UIS)
- Fast intrinsic Rectifier
Applications
- Battery chargers
