IXFR70N15 - Power MOSFET

IXYS (now Littelfuse)

Key Features

Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation.
Low drain to tab capacitance(.

IXFR70N15 power mosfet by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXFR70N15
Manufacturer	IXYS (now Littelfuse)
File Size	34.73 KB
Description	Power MOSFET
Datasheet	IXFR70N15 Datasheet

Full PDF Text Transcription for IXFR70N15 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFR70N15. For precise diagrams, and layout, please refer to the original PDF.

Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 70N15 ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, L...

View more extracted text

ed Backside) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS = 150 V ID25 = 67 A RDS(on)= 28 mW trr £ 250ns Symbol VDSS VDGR VGS VGSM ID25 I D(RMS) IDM I AR EAR E AS dv/dt P D TJ TJM Tstg TL VISOL Weight Symbol VDSS VGS(th) IGSS IDSS R DS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 T C = 25°C TC = 25°C T C = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W T C = 25°C 1.6 mm (0.063 in.

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