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Advanced Technical Information
HiPerFETTM Power MOSFETs IXFR 70N15 ISOPLUS247TM
(Electrically Isolated Backside)
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
VDSS = 150 V ID25 = 67 A RDS(on)= 28 mW
trr £ 250ns
Symbol
VDSS VDGR VGS VGSM ID25 I
D(RMS)
IDM I
AR
EAR E
AS
dv/dt
P D
TJ TJM Tstg TL VISOL Weight
Symbol
VDSS VGS(th) IGSS IDSS
R DS(on)
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
Continuous Transient
TC = 25°C (MOSFET chip capability) External lead (current limit)
TC = 25°C, Note 1
T C
= 25°C
TC = 25°C
T C
= 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W
T C
= 25°C
1.6 mm (0.063 in.
IXFR70N15 Datasheet
