IXFR70N15 Description
Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 70N15 ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS = 150 V ID25 = 67 A RDS(on)= 28 mW trr £ 250ns Symbol VDSS VDGR VGS VGSM ID25.
IXFR70N15 Key Features
- Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
- Low drain to tab capacitance(<30pF)
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Rated for Unclamped Inductive Load
- Fast intrinsic Rectifier