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HiPerFETTM Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFR90N30
VDSS =
ID25 =
≤ RDS(on)
trr
≤
300V 75A 36mΩ 250ns
ISOPLUS247 E153432
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
VISOL
FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Lead Temperature for Soldering Plastic Body for 10s
Maximum Ratings
300
V
300
V
±20
V
±30
V
75
A
360
A
90
A
3
J
5
V/ns
417
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
°C
260
°C
50/60 Hz, 1 Minute
2500
V~
Mounting Force
20..120/4.5..
IXFR90N30 Datasheet
