Datasheet4U Logo Datasheet4U.com

IXFR90N30 Datasheet N-Channel Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview

HiPerFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFR90N30 VDSS = ID25 = ≤ RDS(on) trr ≤ 300V 75A 36mΩ 250ns ISOPLUS247 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Lead Temperature for Soldering Plastic Body for 10s Maximum Ratings 300 V 300 V ±20 V ±30 V 75 A 360 A 90 A 3 J 5 V/ns 417 W - 55 ...

+150 °C 150 °C - 55 ...

+150 °C 300 °C 260 °C 50/60 Hz, 1 Minute 2500 V~ Mounting Force 20..120/4.5..27 N/lb 5 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 45A, Note 1 Characteristic Values Min.

Key Features

  • z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Avalanche Rated z Fast Intrinsic Rectifier z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density.