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IXFT30N85XHV - Power MOSFET

Key Features

  • International Standard Packages.
  • High Voltage Package.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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Full PDF Text Transcription for IXFT30N85XHV (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFT30N85XHV. For precise diagrams, and layout, please refer to the original PDF.

X-Class HiPerFETTM Power MOSFET Advance Technical Information IXFT30N85XHV IXFH30N85X VDSS = ID25 =  RDS(on) 850V 30A 220m N-Channel Enhancement Mode Avalanche Rated Fa...

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 RDS(on) 850V 30A 220m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268HV (IXFT) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268HV TO-247 Maximum Ratings 850 V 850 V 30 V 40 V 30 A 60 A 15 A 1 J 50 V/ns 695 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.1

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