IXFX140N30P Description
300 V 3.0 5.0 V ±200 nA 25 μA 1 mA 20 24 mΩ G D S PLUS247 (IXFX) (TAB) G = Gate S = Source (TAB) D = Drain TAB = Drain.
IXFX140N30P Key Features
- Fast intrinsic diode
- Avalanche Rated
- Low RDS(ON) and QG
- Low package inductance
IXFX140N30P is Power MOSFET manufactured by IXYS.
| Part Number | Description |
|---|---|
| IXFX140N25T | GigaMOS Power MOSFET |
| IXFX140N25T | GigaMOS Power MOSFET |
| IXFX14N100 | HiPerFET Power MOSFETs |
| IXFX100N65X2 | Power MOSFET |
| IXFX120N20 | Power MOSFET |
300 V 3.0 5.0 V ±200 nA 25 μA 1 mA 20 24 mΩ G D S PLUS247 (IXFX) (TAB) G = Gate S = Source (TAB) D = Drain TAB = Drain.