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IXFX140N30P - Power MOSFET

Download the IXFX140N30P datasheet PDF. This datasheet also covers the IXFK140N30P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Fast intrinsic diode.
  • Avalanche Rated.
  • Low RDS(ON) and QG.
  • Low package inductance Advantages z Easy to mount z Space savings z High power density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFK140N30P-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXFX140N30P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFX140N30P. For precise diagrams, and layout, please refer to the original PDF.

PolarTM Power MOSFET HiPerFETTM IXFK140N30P IXFX140N30P N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode VDSS = ID25 = ≤ RDS(on) t rr ≤ 300V 140A 24mΩ 200ns...

View more extracted text
ast Intrisic Diode VDSS = ID25 = ≤ RDS(on) t rr ≤ 300V 140A 24mΩ 200ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting force (PLUS247) Mounting torque (TO-264) PLUS247 TO-264 Maximum Ratings 300 V 300 V ±20 V ±30 V 140 A 75 A 300 A 70 A 5 J 20 1040 -55 ... +150 150 -55 ... +150 300 260 2