IXYS IXFX20N120
HiPerFET Power MOSFETs
| Part No. | IXFX20N120 |
|---|---|
| Datasheet | IXFX20N120 Download |
| Manufacturer |  IXYS |
| Description | HiPerFET Power MOSFETs |
| Buy | Stock & Price |
MAXIMUM RATINGS
1200 1200 ± 30 ± 40 20 80 10 40 2 5 780 -55 ... +150 150 -55 ... +150 300 0.9/6 V V V V A A A mJ J V/ns W °C °C °C °C Nm/lb.in. 6 10 g g PLUS 247TM (IXFX) G D D (TAB) S TO-264 AA (IXFK) G D S D (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264FEATURES
z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic rectifierAPPLICATIONS
z DC-DC converters z Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control z Temperature and lighting controls Advantages PLUS 247TM package for clip or spring mounting z Space savings z High power density z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 V 4.5 V ±100 nA TJ = 25°C TJ = 125°C 100 µA 2 mA...
