IXFX360N10T Description
+175 °C 300 °C 260 °C 1.13/10 20..120 /4.5..27 Nm/lb.in. 10 g 6 g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA Characteristic Values Min.
- Part: IXFX360N10T
- Manufacturer: IXYS
- Size: 183.77 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
IXFX360N10T | N-Channel MOSFET |