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IXFX360N10T - Power MOSFET

Download the IXFX360N10T datasheet PDF. This datasheet also covers the IXFK360N10T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z International Standard Packages z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFK360N10T-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFX360N15T2 Power MOSFET
IXFX320N17T2 GigaMOS TrenchT2 HiperFET Power MOSFET
IXFX320N17T2 GigaMOS TrenchT2 HiperFET Power MOSFET
IXFX32N100P Power MOSFET
IXFX32N100Q3 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK360N10T IXFX360N10T VDSS = ID25 = RDS(on) ≤ trr ≤ 100V 360A 2.9mΩ 130ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 1.6mm (0.062 in.