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IXFX44N50F - Power MOSFET

Key Features

  • l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier.

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HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching Single MOSFET Die IXFX 44N50F IXFK 44N50F VDSS = 500 V ID25 = 44 A RDS(on) = 120 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt P D TJ T JM Tstg T L Md Weight Symbol V DSS VGS(th) IGSS IDSS RDS(on) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 500 V 500 V ±20 V ±30 V 44 A 184 A 44 A 60 mJ 2.