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IXFX52N100X - Power MOSFET

This page provides the datasheet information for the IXFX52N100X, a member of the IXFK52N100X Power MOSFET family.

Features

  • International Standard Packages.
  • Low QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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Full PDF Text Transcription

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X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFK52N100X IXFX52N100X D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1000 V 1000 V  30 V  40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 52 100 10 3 1250 50 -55 ... +150 150 -55 ... +150 A A A J W V/ns C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Torque (TO-264P) Mounting Force (PLUS247) 1.13/10 20..120 /4.5..27 Nm/lb.
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