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Advance Technical Information
HiPerRFTM Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode Avalanche Rated Low Qg, Low Intrinsic Rg High dV/dt, Low trr
IXFK55N50F IXFX55N50F
VDSS =
ID25 =
RDS(on) ≤
trr
≤
500V 55A 85mΩ 250ns
TO-264 (IXFK)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IAR EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
Md FC
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247
Maximum Ratings
500
V
500
V
± 20
V
± 30
V
55
A
220
A
55
A
3
J
10
V/ns
560
-55 .
IXFX55N50F Datasheet
