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IXFX55N50F - Power MOSFET

Download the IXFX55N50F datasheet PDF. This datasheet also covers the IXFK55N50F variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z RF capable Mosfets z Rugged polysilicon gate cell structure z Double metal process for low gate resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic rectifier.

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Note: The manufacturer provides a single datasheet file (IXFK55N50F-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXFX55N50F (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFX55N50F. For precise diagrams, and layout, please refer to the original PDF.

Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Low Qg, Low Intrinsic Rg High dV/dt, Low trr...

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ment Mode Avalanche Rated Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFK55N50F IXFX55N50F VDSS = ID25 = RDS(on) ≤ trr ≤ 500V 55A 85mΩ 250ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247 Maximum Ratings 500 V 500 V ± 20 V ± 30

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
IXYS Corporation Logo IXFX55N50 Power MOSFETs IXYS Corporation

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