Datasheet4U Logo Datasheet4U.com

IXFX64N50P - Power MOSFET

Features

  • z z z G D S (TAB) D = Drain G = Gate S = Source PLUS247 (IXFX) (TAB) G = Gate S = Source D = Drain Tab = Drain Mounting torque (TO-264) TO-264 PLUS247 1.13/10 Nm/lb. in. 10 6 300 g g °C Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 8 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ.

📥 Download Datasheet

Datasheet preview – IXFX64N50P

Datasheet Details

Part number IXFX64N50P
Manufacturer IXYS
File Size 102.51 KB
Description Power MOSFET
Datasheet download datasheet IXFX64N50P Datasheet
Additional preview pages of the IXFX64N50P datasheet.
Other Datasheets by IXYS

Full PDF Text Transcription

Click to expand full text
Advance Technical Information www.DataSheet4U.com PolarHV HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preliminary Data Sheet TM IXFK 64N50P IXFX 64N50P VDSS ID25 RDS(on) trr = 500 V = 64 A ≤ 85 mΩ ≤ 200 ns TO-264 AA (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 64 150 64 80 2.5 20 830 -55 ... +150 150 -55 ...
Published: |