IXYS IXGH10N170
High Voltage IGBT
| Part No. | IXGH10N170 |
|---|---|
| Datasheet | IXGH10N170 Download |
| Manufacturer |  IXYS |
| Description | High Voltage IGBT |
| Buy | Stock & Price |
MAXIMUM RATINGS
1700 V 1700 V ± 20 V ± 30 V 20 A 10 A 70 A ICM = 20 @ 0.8● VCES 110 A W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 1.13/10 °C °C Nm/lb.in. 6g 4g Characteristic Values Min. Typ. Max. 1700 V 3.0 5.0 V 50 μA 500 μA ±100 nA 2.7 4.0 V 3.4 G CE TO-268 (IXGT) C (TAB) GE C (TAB) G = Gate E = Emitter C = Collector TAB = Collector
FEATURES
z International standard packages JEDEC TO-268 and JEDEC TO-247 AD z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classificationAPPLICATIONS
z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies Advantages z High power density z Suitable for surface mounting z Easy to mount with 1 screw, (isolated mounting screw hole) © 2008 IXYS CORPORATION, All rights reserved DS98992A(10/08) Symbol Test Conditions (TJ =...
