IXYS IXGH16N60B2D1
HiPerFAST IGBTs
| Part No. | IXGH16N60B2D1 |
|---|---|
| Datasheet | IXGH16N60B2D1 Download |
| Manufacturer |  IXYS |
| Description | HiPerFAST IGBTs |
| Buy | Stock & Price |
MAXIMUM RATINGS
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 600 V 600 V ±20 V ±30 V TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TJ = 125°C, RG = 22Ω Clamped Inductive load TC = 25°C 40 A 16 A 11 A 100 A ICM = 32 A VCE ≤ VCES 150 W -55 ... +150 °C 150 °C -55 ... +150 °C Mounting Torque (TO-220 & TO-247) Mounting Force (TO-263) 1.13/10 10..65 / 2.2..14.6 Nm/lb.in. N/lb. Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s 300 °C 260 °C TO-263 TO-220 TO-247 2.5 g 3.0 g 6.0 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES,VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 12A, VGE = 15V, Note1 TJ = 125°C Characteristic Values Min. Typ. Max. 3.0 5.5 V 25 μA 1 mA ±100 nA 1.95 V 1.65 V G E C (Tab) TO-220AB (IXGP) GC E TO-247 (IXGH) C (Tab) G DC SE C (Tab) G = Gate E = Emitter C = Collector Tab = CollectorFEATURES
z Optimized for Low Conduction...
