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IXGH24N170A - High Voltage IGBT

Key Features

  • z Optimized for Low Conduction and Switching Losses z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage IGBTs Preliminary Technical Information IXGH24N170A IXGT24N170A VCES = IC25 = VCE(sat) ≤ tfi(typ) = 1700V 24A 6.0V 40ns TO-247 (IXGH) Symbol VCES VCGR VGES VGEM IICC2950 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 1700 1700 ± 20 ± 30 V V V V TTCC = 25°C = 90°C TC = 25°C, 1ms 24 16 75 VCGlaEm=p1e5dVI,nTdVuJc=tiv1e25L°oCa,dRG = 10Ω 0.I8CM• = 50 VCES TJ = 125°C, VCE = 1200V, VGE = 15V, RG = 22Ω 10 TC = 25°C 250 -55 ... +150 150 -55 ... +150 A A A A V μs W °C °C °C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds 300 °C 260 °C Mounting Torque (TO-247) 1.13/10 Nm/lb.in.