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IXGH25N100U1 Datasheet PDF

IXYS IXGH25N100U1

High speed IGBT

Part No. IXGH25N100U1
Datasheet IXGH25N100U1 Download
Manufacturer
IXYS
Description High speed IGBT
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IXGH25N100U1 datasheet page 1 preview

MAXIMUM RATINGS

1000 1000 ±20 ±30 50 25 100 ICM = 50 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C

FEATURES

International standard package JEDEC TO-247 AD l IGBT and anti-parallel FRED in one package l 2nd generation HDMOSTM process l Low VCE(sat) - for minimum on-state conduction losses l MOS Gate turn-on - drive simplicity l Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM l l G C E C = Collector TAB = Collector G = Gate E = Emitter Mounting torque (M3) 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s

APPLICATIONS

Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 25°C TJ = 125°C 5.5 500 8 ±100 25N100U1 25N100AU1 3.5 4.0 V V µA mA nA l l l l l l BVCES VGE(th) ICES I GES VCE(sat) IC IC = 4.5 mA, VGE = 0 V = 500 µA, VCE = VGE AC motor speed control DC servo and robot drives DC choppers Uninterruptible...
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