Test Conditions
IC = 250 μA, VGE = 0 V IC = 250 μA, VCE = VGE
V = 0.8.
V
CE
CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 25 A, VGE = 15 V IC = 75 A
TO-247 TO-268
6
g
4
g
Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max. 2500
V
3.0
5.0 V
TJ = 125°C
50 μA 1 mA
±100 nA
2.9 V 5.2 V
High peak current capability Low saturation voltage MOS Gate turn-on -drive simplicity Rugged NPT structure Molding epoxies meet UL 94 V-0 flammability classification.
Full PDF Text Transcription for IXGH25N250 (Reference)
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IXGH25N250. For precise diagrams, and layout, please refer to the original PDF.
Preliminary Technical Information High Voltage IGBT For Capacitor Discharge Applications IXGH25N250 IXGT25N250 IXGV25N250S VCES = 2500 V IC25 = 60 A V CE(sat) ≤ 2.9 V TO-...
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IXGT25N250 IXGV25N250S VCES = 2500 V IC25 = 60 A V CE(sat) ≤ 2.9 V TO-247 (IXGH) Symbol V CES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg T L TSOLD Md Weight Symbol BVCES VGE(th) I CES IGES VCE(sat) Test Conditions T = 25°C to 150°C J TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, VGE = 20 V, 1 ms VGE= 20 V, TJ = 125°C, RG = 20 Ω Clamped inductive load @ 1250V TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Maximum Ratings 2500 V 2500 V G CE C (TAB) ± 20 V TO-268 (IXGT) ± 30 V 60 A 25 A 200 A G E C (TAB) ICM = 240 A PLUS220SMD (IXGV...S) 250 W -55 ...
IXGH25N250 Datasheet
