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IXGH2N250 - High Voltage IGBT

Features

  • z Optimized for Low Conduction and Switching Losses z International Standard Packages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = 0.8.
  • VCES, VGE = 0V IGES VCE(sat) VCE = 0V, VGE = ± 20V IC = IC110, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 2500 V 3.0 5.5 V TJ = 125°C 10 μA 100 μA ±100 nA TJ = 125°C 2.6 3.1 V 3.1 V Advantages z High Power Density z Low Gate Drive Re.

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Advance Technical Information High Voltage IGBTs for Capacitor Discharge Applications IXGH2N250 IXGT2N250 VCES = IC110 = VCE(sat) ≤ 2500V 2A 3.1V TO-247 (IXGH) Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 50Ω Clamped Inductive Load PC TJ TJM Tstg TL TSOLD Md Weight TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268 Maximum Ratings 2500 V 2500 V ± 20 V ± 30 V 5.5 A 2.0 A 13.5 A ICM = 6 A VCE ≤ 2000 V 32 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in.
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