IXGH2N250 - High Voltage IGBT

Product Overview

IXYS

Part number	IXGH2N250
Manufacturer	IXYS
File Size	184.81 KB
Description	High Voltage IGBT
Datasheet	IXGH2N250 Datasheet
Additional preview pages of the IXGH2N250 datasheet.

z Optimized for Low Conduction and Switching Losses z International Standard Packages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = 0.8.
VCES, VGE = 0V IGES VCE(sat) VCE = 0V, VGE = ± 20V IC = IC110, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 2500 V 3.0 5.5 V TJ = 125°C 10 μA 100 μA ±100 nA TJ = 125°C 2.6 3.1 V 3.1 V Advantages z High Power Density z Low Gate Drive Re.

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Published: Feb 9, 2025 |