IXGH2N250 Description
+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6 g 4 g G CE C (TAB) TO-268 (IXGT) G E C (TAB) G = Gate E = Emitter C = Collector TAB = Collector.
IXGH2N250 Key Features
- VCES, VGE = 0V
IXGH2N250 is High Voltage IGBT manufactured by IXYS.
| Part Number | Description |
|---|---|
| IXGH20N100 | IGBT |
| IXGH20N120B | High Voltage IGBT |
| IXGH20N140C3H1 | GenX3 1400V IGBTs |
| IXGH24N120C3H1 | High speed PT IGBT |
| IXGH24N170A | High Voltage IGBT |
+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6 g 4 g G CE C (TAB) TO-268 (IXGT) G E C (TAB) G = Gate E = Emitter C = Collector TAB = Collector.