The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
GenX3TM 1200V IGBTs
Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching
IXGH32N120A3 IXGT32N120A3
VCES =
IC110 = VCE(sat) ≤
1200V 32A 2.35V
Symbol
VCES VCGR VGES VGEM IC25 IC110 ICM
IA EAS SSOA
(RBSOA)
PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TJ = 125°C, RG = 20Ω Clamped Inductive Load TC = 25°C
1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-247 TO-268
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
75
A
32
A
230
A
20
A
120
mJ
ICM = 150
A
VCE ≤ 0.8 • VCES
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
6.0
g
4.
IXGH32N120A3 Datasheet
