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IXGH35N120B - IGBT

Features

  • International standard packages JEDEC TO-268 and JEDEC TO-247 AD.
  • Low switching losses, low V (sat).
  • MOS Gate turn-on - drive simplicity Symbol BVCES VGE(th) I CES IGES VCE(sat) Test Conditions IC = 1 mA, VGE = 0 V IC = 750 mA, VCE = VGE V =V CE CES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. T= J 25°C TJ = 125°C TJ = 125°C 1200 2.5 V 5V 250 mA 5 mA ±100 nA 3.3 V 2.7 V.

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Datasheet Details

Part number IXGH35N120B
Manufacturer IXYS
File Size 52.45 KB
Description IGBT
Datasheet download datasheet IXGH35N120B Datasheet
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Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B VCES = IC2 = VCE(sat) = =tfi(typ) 1200 V 70 A 3.3 V 160 ns Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 1200 1200 V GES VGEM Continuous Transient ±20 ±30 IC25 TC = 25°C IC90 TC = 90°C ICM TC = 25°C, 1 ms 70 35 140 SSOA (RBSOA) V= GE 15 V, T VJ = 125°C, R G = 5 W Clamped inductive load I = 90 CM @ 0.8 VCES P C T C = 25°C 300 TJ -55 ... +150 T 150 JM Tstg -55 ... +150 Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s 300 260 V V V V A A A A W °C °C °C °C °C M d Weight Mounting torque (M3) 1.13/10 Nm/lb.in.
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