IXGH40N120C3D1 - High Speed PT IGBT

Features

z Optimized for Low Conduction Losses z Square RBSOA z Avalanche Rated z Anti-Parallel Ultra Fast Diode z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement.

IXYS

Datasheet Details

Part number	IXGH40N120C3D1
Manufacturer	IXYS
File Size	204.36 KB
Description	High Speed PT IGBT
Datasheet	IXGH40N120C3D1 Datasheet
Additional preview pages of the IXGH40N120C3D1 datasheet.

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Full PDF Text Transcription

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Preliminary Technical Information GenX3TM C3-Class IGBT w/Diode High Speed PT IGBT for 20 - 50 kHz Switching IXGH40N120C3D1 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 1200V 40A 4.4V 57ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg Md TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Limited by Leads) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TJ = 125°C, RG = 3Ω Clamped inductive load TC = 25°C Mounting Torque Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s Maximum Ratings 1200 V 1200 V ±20 V ±30 V 75 A 40 A 25 A 180 A 30 A 500 mJ ICM = 80 A @VCE <1200 V 380 W -55 ... +150 °C 150 °C -55 ... +150 °C 1.

Published: Feb 10, 2025 |