IXGH48N60A3D1 - Ultra Low Vsat PT IGBT

Features

z Optimized for Low Conduction Losses z Square RBSOA z Anti-Parallel Ultra Fast Diode z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement.

IXYS

Datasheet Details

Part number	IXGH48N60A3D1
Manufacturer	IXYS
File Size	209.72 KB
Description	Ultra Low Vsat PT IGBT
Datasheet	IXGH48N60A3D1 Datasheet
Additional preview pages of the IXGH48N60A3D1 datasheet.

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Full PDF Text Transcription

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GenX3TM 600V IGBT w/Diode Ultra Low Vsat PT IGBT for up to 5kHz switching IXGH48N60A3D1 VCES = IC110 = VCE(sat) ≤ 600V 48A 1.35V TO-247 AD Symbol Test Conditions VCES VCGR VGES VGEM TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient IC110 ICM SSOA (RBSOA) TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped inductive load PC TJ TJM Tstg TL TSOLD Md Weight TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque Maximum Ratings 600 V 600 V ± 20 V ± 30 V 48 A 300 A ICM = 96 A @ ≤ VCES 300 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 260 1.13/10 °C °C Nm/lb.in. 6 g Symbol Test Conditions (TJ = 25°C unless otherwise specified) VGE(th) IC = 250μA, VCE = VGE ICES VCE = 0.

Published: Feb 10, 2025 |