IXGH56N60A3 - Ultra-Low Vsat PT IGBT

Features

z Optimized for Low Conduction Losses z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement.

IXGH56N60A3 Ultra-Low Vsat PT IGBT by IXYS - Datasheet Preview — Datasheet preview – IXGH56N60A3

Datasheet Details

Part number	IXGH56N60A3
Manufacturer	IXYS (now Littelfuse)
File Size	184.03 KB
Description	Ultra-Low Vsat PT IGBT
Datasheet	IXGH56N60A3 Datasheet
Additional preview pages of the IXGH56N60A3 datasheet.

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Full PDF Text Transcription

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Advance Technical Information GenX3TM 600V IGBT IXGH56N60A3 VCES = IC110 = VCE(sat) ≤ 600V 56A 1.35V Ultra-Low Vsat PT IGBT for up to 5 kHz Switching Symbol Test Conditions VCES VCGR VGES VGEM TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient IC25 IC110 ICM SSOA (RBSOA) TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load Pd TJ TJM Tstg TL TSOLD Md Weight TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting torque Maximum Ratings 600 V 600 V ± 20 V ± 30 V 150 56 370 ICM = 150 VCE ≤ 0.8 • VCES 330 - 55 ... +150 150 - 40 ... +150 300 260 1.13/10 6 A A A A W °C °C °C °C °C Nm/lb.in.

Published: Feb 10, 2025 |