IXYS IXGH56N60A3
Ultra-Low Vsat PT IGBT
| Part No. | IXGH56N60A3 |
|---|---|
| Datasheet | IXGH56N60A3 Download |
| Manufacturer |  IXYS |
| Description | Ultra-Low Vsat PT IGBT |
| Buy | Stock & Price |
MAXIMUM RATINGS
600 V 600 V ± 20 V ± 30 V 150 56 370 ICM = 150 VCE ≤ 0.8● VCES 330 - 55 ... +150 150 - 40 ... +150 300 260 1.13/10 6 A A A A W °C °C °C °C °C Nm/lb.in. g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VCE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 44A, VGE = 15V, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 600 V 3.0 5.0 V 50 μA 500 μA ±100 nA 1.22 1.22 1.35 V V TO-247 GG CDES (TAB) G = Gate C = Collector E = Emitter TAB = Collector
FEATURES
z Optimized for Low Conduction Losses z International Standard Package Advantages z High Power Density z Low Gate Drive RequirementAPPLICATIONS
z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts z Inrush Current Protection Circuits © 2009 IXYS CORPORATION, All Rights Reserved DS100174(08/09) Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs...
