Overview: Advance Technical Information GenX3TM 600V IGBT IXGH56N60A3 VCES =
IC110 = VCE(sat) ≤ 600V 56A 1.35V Ultra-Low Vsat PT IGBT for up to 5 kHz Switching Symbol Test Conditions VCES VCGR
VGES VGEM TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
Continuous Transient IC25 IC110 ICM
SSOA (RBSOA) TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load Pd
TJ TJM Tstg
TL TSOLD
Md
Weight TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting torque Maximum Ratings 600 V 600 V ± 20 V ± 30 V 150 56
370
ICM = 150 VCE ≤ 0.8 • VCES
330
- 55 ... +150 150
- 40 ... +150
300 260
1.13/10
6 A A A A
W °C °C °C °C °C Nm/lb.in.
g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VCE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 44A, VGE = 15V, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 600 V 3.0 5.0 V 50 μA 500 μA ±100 nA 1.22 1.22 1.
