IXYS IXGH60N60C3D1
High Speed PT IGBT
| Part No. | IXGH60N60C3D1 |
|---|---|
| Datasheet | IXGH60N60C3D1 Download |
| Manufacturer |  IXYS |
| Description | High Speed PT IGBT |
| Buy | Stock & Price |
MAXIMUM RATINGS
600 V 600 V ±20 V ±30 V 75 A 60 A 26 A 300 A 40 A 400 mJ ICM = 125 A ≤ VCE VCES 380 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 4 g 6 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) IC = 250µA, VCE = VGE ICES VCE = VCES, VGE= 0V IGES VCE(sat) VCE = 0V, VGE = ±20V IC = 40A, VGE = 15V TJ = 125°C TJ = 125°C Characteristic Values Min. Typ. Max. 3.0 5.5 V 50 µA 1 mA ±100 nA 2.2 2.5 V 1.7 V G C E C (Tab) TO-268 (IXGT) G E C (Tab) G = Gate E = Emitter C = Collector Tab = CollectorFEATURES
z Optimized for Low Switching Losses z Square RBSOA z High Avalanche Capability z Anti-Parallel Ultra Fast Diode z International Standard Packages Advantages z High Power Density z Low Gate Drive RequirementAPPLICATIONS
z High Frequency Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts © 2010 IXYS CORPORATION, All Rights Reserved DS100009B(01/10) Symbol Test Conditions (TJ =...
