IXGH60N60C3D1 Overview
+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 3.0 5.5 V 50 µA 1 mA ±100 nA 2.2 2.5 V 1.7 V G C E C (Tab) TO-268 (IXGT) G E C (Tab) G = Gate E = Emitter C = Collector Tab = Collector.
| Part number | IXGH60N60C3D1 |
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| Datasheet | IXGH60N60C3D1-IXYS.pdf |
| File Size | 290.47 KB |
| Manufacturer | IXYS (now Littelfuse) |
| Description | High Speed PT IGBT |
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+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 3.0 5.5 V 50 µA 1 mA ±100 nA 2.2 2.5 V 1.7 V G C E C (Tab) TO-268 (IXGT) G E C (Tab) G = Gate E = Emitter C = Collector Tab = Collector.