IXGH60N60C3D1 Overview
+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 3.0 5.5 V 50 µA 1 mA ±100 nA 2.2 2.5 V 1.7 V G C E C (Tab) TO-268 (IXGT) G E C (Tab) G = Gate E = Emitter C = Collector Tab = Collector.
| Part number | IXGH60N60C3D1 |
|---|---|
| Datasheet | IXGH60N60C3D1-IXYS.pdf |
| File Size | 290.47 KB |
| Manufacturer | IXYS (now Littelfuse) |
| Description | High Speed PT IGBT |
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+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 3.0 5.5 V 50 µA 1 mA ±100 nA 2.2 2.5 V 1.7 V G C E C (Tab) TO-268 (IXGT) G E C (Tab) G = Gate E = Emitter C = Collector Tab = Collector.
See all IXYS (now Littelfuse) datasheets
| Part Number | Description |
|---|---|
| IXGH60N30C3 | High Speed IGBT |
| IXGH64N60B3 | Medium speed low Vsat PT IGBT |
| IXGH6N170 | High Voltage IGBT |
| IXGH100N30C3 | High Speed PT IGBT |
| IXGH10N170 | High Voltage IGBT |
| IXGH10N170A | High Voltage IGBT |
| IXGH12N100 | High Speed IGBT |
| IXGH12N100A | High Speed IGBT |
| IXGH12N60C | IGBT |
| IXGH15N120B2D1 | IGBT |