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IXGK55N120A3H1 - 1200V IGBT

Key Features

  • z Optimized for Low Conduction Losses z Anti-Parallel Ultra Fast Diode Advantages z High Power Density z Low Gate Drive Requirement.

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Full PDF Text Transcription for IXGK55N120A3H1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXGK55N120A3H1. For precise diagrams, and layout, please refer to the original PDF.

GenX3TM 1200V IGBTs w/ Diode Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching Advance Technical Information IXGK55N120A3H1 IXGX55N120A3H1 VCES = IC110 = VCE(sat) ≤ 1200V ...

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rmation IXGK55N120A3H1 IXGX55N120A3H1 VCES = IC110 = VCE(sat) ≤ 1200V 55A 2.3V TO-264 (IXGK) Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C ( Chip Capability ) TC = 110°C TC = 25°C (Lead RMS Limit) TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C 125 A 55 A 120 A 400 A ICM = 110 A @ 0.8 • VCES 460 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.

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