IXGK60N60C2D1 Description
+150 °C °C °C 1.13/10 Nm/lb.in. otherwise specified) Typ.
IXGK60N60C2D1 Key Features
- Very high frequency IGBT and
- Square RBSOA
- High current handling capability
- MOS Gate turn-on for drive simplicity
- Fast Recovery Epitaxial Diode (FRED)