IXGK72N60B3H1 - 600V IGBT

Features

Optimized for Low Conduction and Switching Losses.
Square RBSOA.
Anti-Parallel Ultra Fast Diode Advantages.
High Power Density.
Low Gate Drive Requirement.

IXGK72N60B3H1 600V IGBT by IXYS - Datasheet Preview — Datasheet preview – IXGK72N60B3H1

Datasheet Details

Part number	IXGK72N60B3H1
Manufacturer	IXYS (now Littelfuse)
File Size	288.04 KB
Description	600V IGBT
Datasheet	IXGK72N60B3H1 Datasheet
Additional preview pages of the IXGK72N60B3H1 datasheet.

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Full PDF Text Transcription

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GenX3TM 600V IGBT w/ Diode Medium Speed Low Vsat PT IGBTs 5-40 kHz Switching IXGK72N60B3H1 IXGX72N60B3H1 VCES IC110 VCE(sat) tfi(typ) = 600V = 72A £ 1.8V = 92ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient Maximum Ratings 600 V 600 V 20 V 30 V TC = 25C ( Chip Capability) 178 Terminal Current Limit 160 TC = 110C 72 TC = 25C, 1ms 450 VGE = 15V, TVJ = 125C, RG = 3 Clamped Inductive Load TC = 25C ICM = 240 @ VCE  VCES 540 -55 ... +150 150 -55 ... +150 Maximum Lead Temperature for Soldering 300 1.6 mm (0.062in.) from Case for 10s 260 Mounting Torque (TO-264) Mounting Force (PLUS247) 1.13/10 20..120 /4.5..

Published: Feb 9, 2025 |