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IXGK75N250 - High Voltage IGBT

Features

  • Very High Peak Current Capability Low Saturation Voltage MOS Gate Turn-On Rugged NPT Structure Molding Epoxies meet UL 94V-0 Flammability Classification Advantages Easy to Mount Space Savings High Power Density.

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Preliminary Technical Information High Voltage IGBTs For Capacitor Discharge Applications IXGK75N250 IXGX75N250 VCES = IC110 = VCE(sat) ≤ 2500V 75A 2.7V Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 2500 V 2500 V ±20 V ±30 V TC = 25°C ( Chip Capability ) TC = 110°C TC = 25°C (Lead RMS Limit) TC = 25°C, VGE = 20V, 1ms VGE= 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load TC = 25°C 170 A 75 A 160 A 530 A ICM = 200 A @ 0.8 • VCES 780 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.
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