IXGK82N120B3 - High-Speed Low-Vsat PT IGBT

Features

z Optimized for Low Conduction and Switching Losses z Square RBSOA z High Avalanche Capability z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement.

IXYS

Datasheet Details

Part number	IXGK82N120B3
Manufacturer	IXYS
File Size	225.93 KB
Description	High-Speed Low-Vsat PT IGBT
Datasheet	IXGK82N120B3 Datasheet
Additional preview pages of the IXGK82N120B3 datasheet.

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Full PDF Text Transcription

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Advance Technical Information GenX3TM 1200V IGBTs IXGK82N120B3 IXGX82N120B3 High-Speed Low-Vsat PT IGBTs for 3 - 20 kHz Switching VCES = IC110 = VCE(sat) ≤ 1200V 82A 3.20V TO-264 (IXGK) Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C ( Chip Capability ) TC = 110°C TC = 25°C ( Lead RMS Limit ) TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C 230 A 82 A 120 A 500 A 41 A 750 mJ ICM = 164 A VCE < VCES 1250 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.

Published: Feb 10, 2025 |