IXGL200N60B3 Description
600 V 3.0 5.0 V 200 μA 2 mA ±100 nA 1.35 1.65 1.75 1.50 V V V GCCE E G = Gate C = Collector E = Emitter.
IXGL200N60B3 is Medium speed low Vsat PT IGBT manufactured by IXYS.
| Part Number | Description |
|---|---|
| IXGL75N250 | High Voltage IGBT |
| IXG50I4500KN | X2PT IGBT |
| IXGA150N33TC | IGBT |
| IXGA15N120B2 | IGBT |
| IXGA16N60C2D1 | IGBT |
600 V 3.0 5.0 V 200 μA 2 mA ±100 nA 1.35 1.65 1.75 1.50 V V V GCCE E G = Gate C = Collector E = Emitter.