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IXGL75N250 - High Voltage IGBT

Features

  • Very High Peak Current Capability Low Saturation Voltage MOS Gate Turn-On Rugged NPT Structure.

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Preliminary Technical Information High Voltage IGBT For Capacitor Discharge Applications IXGL75N250 VCES = IC90 = VCE(sat) ≤ 2500V 65A 2.9V ( Electrically Isolated Tab) Symbol VCES VCES VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 2500 V 2500 V ± 20 V ± 30 V TC = 25°C TC = 90°C TC = 25°C, VGE = 20V, 1ms 110 A 65 A 580 A VGE= 15V, TVJ = 125°C, RG = 1Ω ICM = 200 A Clamped Inductive Load VCE < 0.8 • VCES TC = 25°C 430 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062 in.) from Case for 10s 260 °C 50/60Hz, 1 minute 2500 V~ Mounting Force with Clip 30..170 / 7..
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