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IXGN400N60A3 - Ultra-Low-Vsat PT IGBT

Key Features

  • Optimized for Low Conduction losses.
  • Square RBSOA.
  • High Current Capability.
  • Isolation Voltage 3000 V~.
  • International Standard Package Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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Full PDF Text Transcription for IXGN400N60A3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXGN400N60A3. For precise diagrams, and layout, please refer to the original PDF.

GenX3TM 600V IGBT IXGN400N60A3 Ultra-Low-Vsat PT IGBT for up to 5kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight...

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VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C (Chip Capability) TC = 110C Terminal Current Limit TC = 25C, 1ms VGE= 15V, TVJ = 125C, RG = 0.5 Clamped Inductive Load TC = 25C 50/60Hz IISOL 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque (M4) E Maximum Ratings 600 V 600 V ±20 V ±30 V 400 A 190 A 200 A 800 A ICM = 400 A @ 0.8 • VCES 830 W -55 ... +150 C 150 C -55 ... +150 C 2500 V~ 3000 V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in.

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