IXYS IXGN400N60A3
Ultra-Low-Vsat PT IGBT
MAXIMUM RATINGS
600 V 600 V ±20 V ±30 V 400 A 190 A 200 A 800 A ICM = 400 A @ 0.8● VCES 830 W -55 ... +150 C 150 C -55 ... +150 C 2500 V~ 3000 V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 1mA, VGE = 0V VGE(th) IC = 250uA, VCE = VGE ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ±20V TJ = 125C VCE(sat) IC = 100A, VGE = 15V, Note 1 IC = 400A Characteristic Values Min. Typ. Max. 600 V 3.0 5.5 V 250 μA 2.5 mA ±400 nA 1.05 1.25 V 1.55 V VCES = IC25 = VCE(sat) 600V 400A 1.25V SOT-227B, miniBLOC E153432 E G E C G = Gate, C = Collector, E = Emitter either emitter terminal can be used as Main or Kelvin Emitter
FEATURES
● Optimized for Low Conduction losses● Square RBSOA
● High Current Capability
● Isolation Voltage 3000 V~
● International Standard Package Advantages
● High Power Density
● Low Gate Drive Requirement
APPLICATIONS
● Power Inverters● UPS
● Motor Drives
● SMPS
● PFC Circuits
● Battery Chargers
● We...