Overview: Advance Technical Information GenX3TM 1200V IGBT w/ Diode IXGN82N120B3H1 High-Speed Low-Vsat PT IGBT for 3-20 kHz Switching V CES
I C110
VCE(sat) = 1200V = 64A ≤£ 3.2V Symbol
VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA)
PC TJ TJM Tstg VISOL
Md
Weight Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous
Transient
TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms
TC = 25°C TC = 25°C VGE= 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load
TC = 25°C 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque Maximum Ratings 1200 V 1200 V ±20 V ±30 V 145 A 64 A 42 A 550 A 41 A 750 mJ ICM = 164 A @VCE ≤ VCES 595 W -55 ... +150 °C 150 °C -55 ... +150 °C 2500 V~ 3000 V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) IC = 1mA, VCE = VGE ICES VCE = VCES, VGE = 0V Note 1, TJ = 125°C IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 82A, VGE = 15V, Note 2 Characteristic Values Min. Typ. Max. 3.0 5.0 V 50 μA 6 mA ±200 nA 2.7 3.
