IXGP20N120BD1 Overview
+150 °C °C °C 0.55/5 Nm/lb.in. 300 °C 260 °C 4g TO-220 (IXGP) GC E C (TAB) G = Gate E = Emitter C = Collector TAB = Collector.
IXGP20N120BD1 Key Features
- Induction heating
- Rice cookers z MOS Gate turn-on
- drive simplicity z Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low IRM
- Gate 3
- Emitter
- Collector 4
- Collector
- VCES, higher TJ or increased RG. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %