IXYS IXGP20N120BD1
High Voltage IGBT
| Part No. | IXGP20N120BD1 |
|---|---|
| Datasheet | IXGP20N120BD1 Download |
| Manufacturer |  IXYS |
| Description | High Voltage IGBT |
| Buy | Stock & Price |
MAXIMUM RATINGS
1200 1200 V V ±20 V ±30 V 40 A 20 A 100 A ICM = 40 @0.8 VCES 190 A W -55 ... +150 150 -55 ... +150 °C °C °C 0.55/5 Nm/lb.in. 300 °C 260 °C 4g TO-220 (IXGP) GC E C (TAB) G = Gate E = Emitter C = Collector TAB = CollectorFEATURES
z International standard package z IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers z MOS Gate turn-on - drive simplicity z Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Advantages z Saves space (two devices in one package) z Easy to mount with 1 screw z Reduces assembly time and cost Symbol VGE(th) ICES IGES VCE(sat) Test Conditions IC = 250 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 20A, VGE = 15 V Note 2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 20N120B 20N120BD1 2.5 5.0 V 50 µA 150 µA TJ=125°C ±100 nA 2.9 3.4 V 2.8 V © 2003 IXYS All rights reserved DS99138(12/03) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless...
