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IXGR50N60C2D1 - HiPerFAST IGBT

Download the IXGR50N60C2D1 datasheet PDF. This datasheet also covers the IXGR50N60C2 variant, as both devices belong to the same hiperfast igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Very high frequency IGBT and anti-parallel FRED in one package.
  • Square RBSOA.
  • High current handling capability.
  • MOS Gate turn-on for drive simplicity.
  • Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGR50N60C2_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXGR50N60C2D1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXGR50N60C2D1. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com HiPerFAST TM IGBT with Diode C2-Class High Speed IGBTs Preliminary Data Sheet IXGR 50N60C2 IXGR 50N60C2D1 VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A =...

View more extracted text
GR 50N60C2 IXGR 50N60C2D1 VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 48 ns Symbol V CES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC VISOL TJ TJM Tstg Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C 50/60 Hz RMS, t = 1m Maximum Ratings 600 600 ± 20 ± 30 75 36 300 ICM = 100 200 2500 -55 ... +150 150 -55 ...

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