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IXGR60N60C3D1 Datasheet High Speed PT IGBT

Manufacturer: IXYS (now Littelfuse)

Overview

GenX3TM 600V IGBT w/ Diode IXGR60N60C3D1 (Electrically Isolated Back Surface) High Speed PT IGBT for 40-100 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg VISOL FC TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C ( Limited by Leads) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C 50/60 Hz, RMS, t = 1minute IISOL < 1mA t = 10 s Mounting Force Maximum Ratings 600 V 600 V ±20 V ±30 V 75 A 30 A 17 A 260 A 40 A 400 mJ ICM = 125 A VCE ≤ VCES 170 W -55 ...

+150 °C 150 °C -55 ...

+150 °C 2500 V~ 3000 V~ 20..120/4.5..27 N/lb Maximum Lead Temperature for Soldering 300 °C 1.6mm (0.062 in.) from Case for 10s 260 °C 5 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 40A, VGE = 15V, Note 1 TJ = 125°C Characteristic Values Min.

Key Features

  • z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V Electrical Isolation z Optimized for Low Switching Losses z Square RBSOA z Avalanche Rated z Anti-Parallel Ultra Fast Diode Advantages z High Power Density z Low Gate Drive Requirement.