IXGR60N60C3D1
Key Features
- z Silicon Chip on Direct-Copper Bond (DCB) Substrate
- Isolated Mounting Surface z 2500V Electrical Isolation
- Optimized for Low Switching Losses
- Square RBSOA
- Avalanche Rated
- Anti-Parallel Ultra Fast Diode Advantages
- High Power Density
- Low Gate Drive Requirement
