Datasheet4U Logo Datasheet4U.com

IXGR60N60C3D1 - High Speed PT IGBT

Features

  • z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V Electrical Isolation z Optimized for Low Switching Losses z Square RBSOA z Avalanche Rated z Anti-Parallel Ultra Fast Diode Advantages z High Power Density z Low Gate Drive Requirement.

📥 Download Datasheet

Datasheet preview – IXGR60N60C3D1

📁 Similar Datasheet

Other Datasheets by IXYS

Full PDF Text Transcription

Click to expand full text
GenX3TM 600V IGBT w/ Diode IXGR60N60C3D1 (Electrically Isolated Back Surface) High Speed PT IGBT for 40-100 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg VISOL FC TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C ( Limited by Leads) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C 50/60 Hz, RMS, t = 1minute IISOL < 1mA t = 10 s Mounting Force Maximum Ratings 600 V 600 V ±20 V ±30 V 75 A 30 A 17 A 260 A 40 A 400 mJ ICM = 125 A VCE ≤ VCES 170 W -55 ... +150 °C 150 °C -55 ... +150 °C 2500 V~ 3000 V~ 20..120/4.5..
Published: |