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IXGR64N60A3 - Ultra-low Vsat PT IGBT

Features

  • z Silicon chip on Direct-Copper Bond (DCB) substrate z Isolated mounting surface z 2500V electrical isolation Advantages z High power density z Low gate drive requirement.

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Preliminary Technical Information GenX3TM 600V IGBT Ultra-low Vsat PT IGBTs for up to 5kHz switching IXGR64N60A3* *Obsolete Part Number VCES = IC110 = VCE(sat) ≤ 600V 47A 1.35V Symbol VCES Test Conditions TJ = 25°C to 150°C Maximum Ratings 600 V ISOPLUS247TM (IXGR) E153432 VCGR VGES VGEM IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg FC TL TSOLD VISOL Weight TJ = 25°C to 150°C, RGE = 1MΩ 600 V Continuous Transient TC = 110°C TC = 25°C, 1ms e VGE= 15V, TVJ = 125°C, RG = 3Ω t Clamped inductive load @ VCE ≤ 600V TC = 25°C le Mounting Force 1.6mm (0.063 in.) from case for 10s o Plastic body for 10s 50/60 Hz, RMS Obs IISOL ≤ 1mA ± 20 ± 30 47 350 ICM = 100 200 -55 ... +150 150 -55 ... +150 20..120/4.5..27 300 260 t = 1min 2500 t = 1s 3000 6 V V A A A W °C °C °C N/lb.
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