IXGR64N60A3
Key Features
- z Silicon chip on Direct-Copper Bond (DCB) substrate
- Isolated mounting surface z 2500V electrical isolation Advantages
- High power density
- Low gate drive requirement
- Part: IXGR64N60A3
- Description: Ultra-low Vsat PT IGBT
- Manufacturer: IXYS
- Size: 871.38 KB